a-SiNx:H Antireflective And Passivation Layer Deposited By Atmospheric Pressure Plasma

Passivation of GaAs surface by atomic-layer-deposited titanium nitride

The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

Poly (Ethylene Glycol-Co-Styrene) Films Deposited by Plasma Polymerization Reactions at Atmospheric Pressure

Atmospheric pressure plasma co-polymerization of ethylene glycol and styrene was applied to produce poly (ethylene glycol-co-styrene) using a dielectric barrier discharge. The chemical structure of polymerized films was studied by Fourier-transform infrared spectroscopy which confirms that we obtained copolymerized films with hydroxyl groups incorporated. Chemical composition of films was studi...

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A...

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide